Manipulation of Temperature-Dependent Luminescence Behaviors of Mn4+-Activated Fluoride Phosphors

Article Engineering, Electrical & Electronic

Temperature-Dependent Electroluminescence of Phosphor-Converted White LEDs With K2SiF6:Mn4+ Below Room Temperature

Debao Zhang et al.

Summary: The high-efficiency Mn4+-activated red phosphor of K2SIF6:Mn4+ synthesized at low temperature demonstrates a large negative-thermal-quenching effect, resulting in a wide color gamut for pc-WLEDs. By utilizing this property, a color rendering index up to R-a = 93 is achieved for high-brightness pc-WLED with relatively low blue light from the LED chip.

IEEE ELECTRON DEVICE LETTERS (2022)

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Review Materials Science, Multidisciplinary

Review-Negative Thermal Quenching of Mn4+ Luminescence in Fluoride Phosphors: Effects of the 4A2g → 4T2g Excitation Transitions and Normal Thermal Quenching

Sadao Adachi

Summary: The thermal stability of phosphor materials is highly important and scientifically interesting. Mn4+-activated fluoride and oxyfluoride phosphors exhibit a unique thermal quenching behavior, known as negative thermal quenching (TQ), where the photoluminescence intensity increases with increasing temperature. This phenomenon is attributed to the coupling of forbidden transitions with lattice vibrations. In this study, the effect of excitation transitions on the negative TQ behavior is discussed, along with the temperature dependence of decay time and quantum efficiency. The analysis model presented shows good agreement with experimental data, highlighting the importance of understanding these properties in phosphor materials.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2022)

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Article Chemistry, Physical

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Xiaorui Wang et al.

Summary: This article investigates the phenomenon of negative thermal quenching in the YL band of Si-doped GaN and concludes that it is caused by the thermal transfer of excited holes from shallow acceptors to deep acceptors. The YL lineshape is analyzed, and important physical parameters related to the YL process are determined. The position of the YL deep acceptor level is estimated.

JOURNAL OF PHYSICAL CHEMISTRY C (2022)

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Article Physics, Applied

Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Xiaorui Wang et al.

Summary: The article observes large negative thermal quenching of the yellow luminescence in non-polar InGaN/GaN quantum well samples when carriers are optically excited in the quantum well layers. A simple model considering the thermal transfer of carriers is proposed to interpret this phenomenon and the thermal activation energy of carriers is determined through data fitting.

JOURNAL OF APPLIED PHYSICS (2021)

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Article Engineering, Environmental