Flexible High-Entropy Poly(vinyl alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor

In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrOx high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal-insulator-metal (MIM) and TFT devices and carried out flexible tests. The test results show that the mixed dielectric layer attains a leakage current of 3.6 x 10(-11) A under the bending radius of 5 mm. In the application of the TFT, the device still has good performance after 10 000 bends with a mobility of 3.1 cm(2) V-1 s(-1), an I-on/I-off of 1.4 x 10(7), a threshold voltage of 3.3 V, and a threshold swing of 0.20 V/decade. In addition, the average transmittance of the hybrid dielectric layer in the visible range is 90.8%. Therefore, high-entropy PVA hybrid films have high transparency, low leakage current, and good bending resistance and have broad application prospects in transparent and flexible devices.

Automated summary

In this study, a flexible dielectric layer was prepared by combining HfMgTiYZrOx high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material. The fabricated metal-insulator-metal (MIM) and TFT devices showed good performance in flexible tests, with low leakage current and high transparency. These findings suggest that high-entropy PVA hybrid films have great potential for applications in transparent and flexible devices.