Leakage-Limitation Engineering Derived from an Interfacial Charge Barrier for Dielectric Energy Storage in Relaxation Ferroelectric Films

Fordielectric energy storage films, high leakage current alwaysresults in larger loss of energy, heating breakdown, and poor stability.This work designs an interfacial charge barrier by combining withNa(0.5)Bi(3.25)La(1.25)Ti(4)O(15) and BaBi3.4La0.6Ti4O15 films with different conductivity and dielectric constantto substantially improve the leakage characteristics, thereby obtaininga breakdown electric field as high as 3683 kV/cm and superior energystorage performances with an energy storage density of 106 J/cm(-3) and an efficiency of 73.6%. Meanwhile, excellentfrequency, temperature, and fatigue for stable operating states areachieved in the composite films. The interfacial charge barrier playsa key role in limiting the leakage and enhancing the breakdown fielddue to the scattering or absorption for the space charges. The electric-fieldand electric-current density distribution simulated by the finiteelement analysis shows that the interfacial charge barrier impedesthe flow of leakage current and raises the breakdown electric field.This work provides a leakage-limitation engineering for designinghigh-performance film dielectric capacitor devices.

Automated summary

This work designs an interfacial charge barrier to improve the leakage characteristics and achieve superior energy storage performances in film dielectric capacitor devices. The interfacial charge barrier limits leakage and enhances the breakdown field, resulting in a high breakdown electric field and excellent energy storage performance.