4.7 Article

Thermal diffusion of lithium implanted in small and large grain boron carbide

Journal

JOURNAL OF NUCLEAR MATERIALS
Volume 582, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.jnucmat.2023.154490

Keywords

Boron carbide; Diffusion; Lithium; TOF-SIMS

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This study aims to investigate the Li diffusion in B4C. The results showed that the thermal diffusion into the grain boundaries in B4C is about four orders of magnitude higher than into the grains. These findings are of great importance for material selection and safety control in nuclear reactors.
Boron carbide (B4C) is used as a neutron absorber for nuclear reactor control and installation protection in most types of reactors. When the B4C is irradiated in the reactor, large quantities of lithium and helium (up to about 1022 /cm3) are produced due to the neutron absorption reaction 10B (n, alpha) 7Li. This work aims at studying the Li diffusion in large grain size (20-50 mu m) or small grain size (0.2 - 5 mu m) B4C in the temperature range of 500-800 degrees C. Lithium was implanted in B4C samples at a fluence of 1014 ions/cm2 (maximum concentration of 54 at. ppm). The Li concentration profiles as a function of depth were obtained before and after each heat treatment by Time-Of-Flight Secondary Ionization Mass Spectrometry technique. A heterogeneous diffusion process was observed depending on the implantation depth. Considering diffusion in the non-damaged, bulk material beyond the implanted zone, the thermal diffusion of lithium into the grain boundaries was found to be about four orders of magnitude higher than into the grains.

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