The effect of graphene layers on the optoelectronic properties of graphene-silicon photodetector

The graphene/silicon (g/Si) heterojunction has garnered significant attention due to the exceptional properties of graphene. As a result of graphene's semi-metallic nature, the g/Si junction forms a Schottky diode. This study investigates the impact of the number of graphene layers on the optoelectronic properties of the Schottky diode by fabricating single, double, and triple-layer graphene-silicon Schottky diodes (GSSDs). The electro-optical properties of the samples were analyzed using light sources with varying wavelengths and intensities. The single-layer sample exhibited the highest responsivity in red light. Additionally, the response of the samples to all wavelengths decreased with increasing temperature. The samples response stability to light was favorable, with less than a 2% change observed after one month from the time of fabrication. Finally, the response speed of the samples to light was examined and reported. The single-layer sample exhibited a response speed of 277 microseconds (rise time) when the light was turned on and 307 microseconds (fall time) when the light was turned off.

Automated summary

This study investigates the impact of the number of graphene layers on the optoelectronic properties of the graphene/silicon heterojunction Schottky diode. The single-layer sample exhibited the highest responsivity in red light. The response of the samples to all wavelengths decreased with increasing temperature, and the response stability to light was favorable with less than a 2% change observed after one month.