Related references
Note: Only part of the references are listed.Growth of bulk β-Ga2O3 single crystals by the Czochralski method
Zbigniew Galazka
JOURNAL OF APPLIED PHYSICS (2022)
Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications
R. K. Kaneriya et al.
MICROELECTRONIC ENGINEERING (2022)
A study of gate recess-width control of InP-based HEMTs by a Si3N4 passivation layer
Yuying Xie et al.
MICROELECTRONIC ENGINEERING (2022)
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
Jialin Li et al.
SUPERLATTICES AND MICROSTRUCTURES (2022)
A state-of-art review on gallium oxide field-effect transistors
Rundi Qiao et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Shivani et al.
MATERIALS TODAY COMMUNICATIONS (2022)
Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
G. Purnachandra Rao et al.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2022)
DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited)
Satyaki Ganguly et al.
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)
Field plated, gate work function engineered AlGaN channel HEMTs with improved DC, RF and power performance
P. S. Sreelekshmi et al.
MICRO AND NANOSTRUCTURES (2022)
Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
Yan Cheng et al.
APPLIED PHYSICS LETTERS (2021)
Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure
Hao Wu et al.
RESULTS IN PHYSICS (2021)
Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
Luca Nela et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2021)
Investigation of Thermal Properties of β-Ga2O3 Nanomembranes on Diamond Heterostructure Using Raman Thermometry
Yixiong Zheng et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)
On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate
Zeheng Wang et al.
NANOSCALE RESEARCH LETTERS (2019)
β-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Zhanbo Xia et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
Anna Malmros et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Tamotsu Hashizume et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Enhancement of breakdown voltage in AlGaN/GaN HEMT using passivation technique for microwave application
Subhash Chander et al.
SUPERLATTICES AND MICROSTRUCTURES (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Three-dimensional anisotropic thermal conductivity tensor of single crystalline beta-Ga2O3
Puqing Jiang et al.
APPLIED PHYSICS LETTERS (2018)
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
Zbigniew Galazka et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Optimal III-nitride HEMTs - From Materials and Device Design to Compact model of the 2DEG Charge Density
Kexin Li et al.
GALLIUM NITRIDE MATERIALS AND DEVICES XII (2017)
Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT
Kanjalochan Jena et al.
JOURNAL OF ELECTRONIC MATERIALS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Anisotropic thermal conductivity in single crystal β-gallium oxide
Zhi Guo et al.
APPLIED PHYSICS LETTERS (2015)
Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC
P. Gamarra et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Epitaxial relationship between wurtzite GaN and β-Ga2O3
Encarnacion G. Villora et al.
APPLIED PHYSICS LETTERS (2007)
Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications
W Saito et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)
AlGaN/GaN HEMTs - An overview of device operation and applications
UK Mishra et al.
PROCEEDINGS OF THE IEEE (2002)