Sensitivity estimation of indium oxide thin film for gamma sensing

This article aims to study the modification in the structural, optical and electrical properties of indium oxide thin film after gamma irradiation and estimation of sensitivity for gamma sensing applications. The thin film of indium oxide was deposited on a 450 & DEG;C preheated glass substrate using the spray pyrolysis technique. The deposited thin film of molar concentration 0.15 M and thickness of around 600 nm was irradiated with different gamma doses (100 Gy, 200 Gy, 300 Gy and 400 Gy). The optical properties of the irradiated film are studied using UV-Visible spectroscopy. Transmittance increased after irradiation up to 200 Gy and beyond that, it decreased. Indium oxide is an n-type semiconductor which exhibits both direct and indirect transitions. Both direct and indirect bandgap energy are calculated using Tauc's plot. Extinction coefficient and refractive index variation with irradiation were also estimated. Photoluminescence study confirmed the gamma-induced defect formation and annihilation for an irradiation dose of 400 Gy and 200 Gy, respectively. Resistivity also decreased up to 200 Gy and beyond that, it increased. The sensitivity of the deposited film was estimated from the electrical measurements, and it lies between 10.7 and 53.4 mA/cm(2)/Gy.

Automated summary

This article investigates the changes in the structure, optics, and electrical properties of indium oxide thin film after gamma irradiation. The sensitivity for gamma sensing applications is also estimated. The thin film was deposited on a glass substrate using spray pyrolysis and irradiated with different doses of gamma radiation. The optical properties, including transmittance and bandgap energy, were analyzed. Additionally, photoluminescence and resistivity measurements were taken. The sensitivity of the film was found to be between 10.7 and 53.4 mA/cm(2)/Gy.