Oxide-based synaptic transistors gated by solid biopolymer electrolytes

In this study, indium-gallium-zinc-oxide (IGZO) synaptic transistors gated by solid biopolymer electrolytes (SBEs) were fabricated on glass substrates. Ammonium bromide (NH4Br) was first doped in SBE-based alginate as the gate dielectric to study the performances of synaptic transistors. With the NH4Br doping, a high electric-double-layer capacitance of similar to 6.4 mu F cm(-2) was obtained for the biopolymer electrolyte, which could be attributed to the incorporation of excess protons into the electrolyte from the complexation between alginate and NH4Br. Moreover, synaptic functions based on this IGZO transistor gated by NH4Br-doped alginate were successfully emulated, including excitatory post-synaptic current, paired-pulse facilitation and post-tetanic potentiation. The present results may provide a solution for the performance improvements of synaptic electronics.

Automated summary

In this study, IGZO synaptic transistors gated by SBEs were fabricated and NH4Br was doped in SBE-based alginate as the gate dielectric. The doping of NH4Br resulted in a high electric-double-layer capacitance for the biopolymer electrolyte, and various synaptic functions were successfully emulated. These findings provide a potential solution for enhancing the performance of synaptic electronics.