Compressive failure mechanism of sintered nano-silver

As a promising packaging material for the third-generation semiconductor, the compressive behavior and failure mechanism of sintered nano-silver are vital for the reliability of packaging structure, which were investigated experimentally and numerically in the current study. The rate-dependent properties and microstructure evolution were determined by compression experiments under five loading rates at room temperature. Microscopically, the voids in the sintered nano-silver exhibit multi-scale distribution under specific sintering conditions, the corresponding failure mechanism is clarified by finite element analysis and scanning electron microscopy. Furthermore, a yield strength model with different porosity was proposed, which was adopted in the finite element analysis to investigate the microstructure evolution of sintered nano-silver. Eventually, the multi-scale simulation of the failure realized through the finite element model, the stress state of microstructure and the failure mechanism that is dependent on the multi-stage void were confirmed by the numerical simulation and experimental analysis.

Automated summary

The compressive behavior and failure mechanism of sintered nano-silver were investigated experimentally and numerically in this study, which is important for the reliability of packaging structure. The rate-dependent properties and microstructure evolution were determined through compression experiments at room temperature. The multi-scale distribution of voids in the sintered nano-silver under specific sintering conditions was clarified, and a yield strength model with different porosity was proposed. The numerical simulation and experimental analysis confirmed the stress state and failure mechanism of the microstructure.