☆ 4.6 Article

Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped ?-Ga2O3 thin films on sapphire substrates

JOURNAL OF LUMINESCENCE (2023)

Related references

Note: Only part of the references are listed.

Article Chemistry, Physical

Crystallization and bandgap variation of non-stoichiometric amorphous Ga2O3-x thin films during post-annealing process

Hojoon Lim et al.

Summary: The evolution of the structural and chemical properties of non-stoichiometric amorphous Ga2O3-x thin films during post-annealing in an atmospheric environment was investigated. The results showed that the films crystallized into a mixture of alpha and beta phases, achieving a stoichiometric state. The optical bandgap increased with the increase of annealing temperature.

APPLIED SURFACE SCIENCE (2022)

Add to Collection

Article Materials Science, Ceramics

Enhanced selective ammonia detection of spray deposited Cd-doped β-Ga2O3 thin films with low hysteresis effect

R. Pandeeswari et al.

Summary: Cd-doped beta-Ga2O3 thin films were successfully deposited using the spray pyrolysis technique at different concentrations. The results showed that Cd doping induced a change in the crystal structure to monoclinic with (2 0 1) orientation, and the 4% Cd-doped Ga2O3 thin films exhibited excellent sensing properties for low-level detection of ammonia at ambient temperature, including high sensitivity, fast response-recovery time, low hysteresis, and good stability.

CERAMICS INTERNATIONAL (2022)

Add to Collection

Article Materials Science, Coatings & Films

Electrical properties of p-type Zn:Ga2O3 thin films

Ekaterine Chikoidze et al.

Summary: Ultra-wide bandgap gallium oxide is a promising semiconductor platform for power electronics and deep ultraviolet optoelectronics. Finding suitable acceptor dopants for gallium oxide is challenging. This study investigates the effects of zinc doping on Ga2O3 thin films, providing insights for improving high voltage device performance.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2022)

Add to Collection

Article Materials Science, Ceramics

Recent progress of Ga2O3-based gas sensors

Hongchao Zhai et al.

Summary: Gas sensors fabricated from Ga2O3 materials have superior properties and have been commercialized for detecting oxygen and carbon monoxide. Recent studies have shown potential applications of Ga2O3-based gas sensors in detecting other gases. This article presents the recent advances, influence factors, and applications of Ga2O3-based gas sensors, as well as discussing the challenges and opportunities.

CERAMICS INTERNATIONAL (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Influence of Al doping on crystal structure, optical, and photoluminescence characteristics of ZnGa2O4 films

Anoop Kumar Singh et al.

Summary: Al-doped ZnGa2O4 thin film phosphors were grown on sapphire substrates, and the effects of Al doping on the crystal structure and optical characteristics of the films were investigated.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

Add to Collection

Article Chemistry, Physical

On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

E. B. Yakimov et al.

Summary: Lightly n-type doped Ga2O3 layers grown by Halide Vapor Phase Epitaxy (HVPE) on bulk n(+)-Ga2O3 substrates were treated with fast reactor neutrons, 20 MeV protons, or high ion density Ar plasma, leading to an increase in deep acceptors concentration. This resulted in a significant enhancement of photocurrent and EBIC current collection efficiency in Schottky diodes on the layers, potentially improving the photosensitivity of Ga2O3-based solar-blind photodetectors.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

Add to Collection

Article Physics, Applied

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

George Seryogin et al.

APPLIED PHYSICS LETTERS (2020)

Add to Collection

Article Materials Science, Multidisciplinary

Sputtered-Growth of High-Temperature Seed-Layer Assisted β-Ga2O3Thin Film on Silicon-Substrate for Cost-Effective Solar-Blind Photodetector Application

Kanika Arora et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Add to Collection

Article Chemistry, Physical

Influence of oxygen on sputtering of aluminum-gallium oxide films for deep-ultraviolet detector applications

Po-Wei Chen et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2019)

Add to Collection

Article Chemistry, Physical

Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films

Jiajia Tao et al.

APPLIED SURFACE SCIENCE (2019)

Add to Collection

Article Physics, Condensed Matter

Electronic transport properties in metal doped beta-Ga2O3: A first principles study

Chaoqun Zhang et al.

PHYSICA B-CONDENSED MATTER (2019)

Add to Collection

Article Chemistry, Physical

The effect of oxygen partial pressure on band gap modulation of Ga2O3 grown by pulsed laser deposition

Thi Kim Oanh Vu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2019)

Add to Collection

Review Materials Science, Multidisciplinary

Review-RF Sputtered Films of Ga2O3

Ashwin Kumar Saikumar et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

Add to Collection

Article Materials Science, Multidisciplinary

Growth and characterization of alpha-, beta- and epsilon-phases of Ga2O3 using MOCVD and HVPE techniques

Yao Yao et al.

MATERIALS RESEARCH LETTERS (2018)

Add to Collection

Article Physics, Applied

Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

Xiaolong Zhao et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)

Add to Collection

Article Chemistry, Physical

Catalytic growth and characterization of single crystalline Zn doped p-type β-Ga2O3 nanowires

Qiuju Feng et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

Add to Collection

Article Chemistry, Physical

Characterization of oxygen deficient gallium oxide films grown by PLD

A. Petitmangin et al.

APPLIED SURFACE SCIENCE (2013)

Add to Collection

Article Chemistry, Analytical

Hydrogen gas sensor with self temperature compensation based on β-Ga2O3 thin film

Shinji Nakagomi et al.

SENSORS AND ACTUATORS B-CHEMICAL (2013)

Add to Collection

Article Physics, Multidisciplinary

Electronic structures and optical properties of Zn-doped β-Ga2O3 with different doping sites

Li Chao et al.

CHINESE PHYSICS B (2012)

Add to Collection

Article Physics, Applied

Enhanced photoluminescence of Ga2O3:Dy3+ phosphor films by Li+ doping -: art. no. 033511

ML Pang et al.

JOURNAL OF APPLIED PHYSICS (2005)

Add to Collection

Article Chemistry, Physical

Hybrid functionals based on a screened Coulomb potential

J Heyd et al.

JOURNAL OF CHEMICAL PHYSICS (2003)

Add to Collection

Article Crystallography

Luminescence characteristics of pulsed laser deposited ZnGa2O4 thin film phosphors grown on various substrates

SS Yi et al.

JOURNAL OF CRYSTAL GROWTH (2003)

Add to Collection

Article Materials Science, Multidisciplinary

Luminescence characteristics of ZnGa2O4 thin film phosphors grown by pulsed laser deposition

SS Yi et al.

MATERIALS LETTERS (2002)

Add to Collection

Article Chemistry, Physical

Ga2O3 thin film for oxygen sensor at high temperature

M Ogita et al.

APPLIED SURFACE SCIENCE (2001)

Add to Collection

© Peeref 2019-2024. All rights reserved.