In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Herein, we report that high-quality SiN:H films embedded with Si QDs were in-situ fabricated and prepared by the reactive facing target sputtering, which relies on tuning N2 and Ar mixture gas flow ratio. The size of Si QDs in SiN:H films can be tuned from 3.87 nm to 1.40 nm, which exhibit color-tunable photoluminescence from red to blue in the visible region. The microstructure evolution and optical properties of SiN:H films embedded with Si QDs were analyzed by FTIR, Raman, PL, and TRPL measurements, respectively. Considering their unique emission properties, SiN:H films embedded with Si QDs were especially utilized as the emitting layer for fabricating high-performance EL SiN-based LEDs. The broad EL emission properties of the devices were explored by both experimental observations and a theoretical model. This work offers a novel idea to prepare high-quality SiN:H films embedded with Si QDs and a deep understanding of their optoelectronic properties.

Automated summary

In this study, high-quality SiN:H films embedded with Si quantum dots (QDs) were fabricated and prepared by reactive facing target sputtering. The size of Si QDs in the films can be tuned from 3.87 nm to 1.40 nm, showing color-tunable photoluminescence from red to blue in the visible region. The microstructure evolution and optical properties of the films were analyzed by various measurements, and their potential applications in high-performance EL SiN-based LEDs were explored.