Fabrication and Characteristics of a Zinc Oxide Tunnel Effect Transistor with High Current Output

A zinc oxide (ZnO)/silver double Schottky junction tunnel effect transistor was fabricated by radio frequency magnetron sputtering. ZnO was used as the active layer of the transistor, and the electrical characteristics of the specimen were analysed. Through the analysis and calculation of the transfer characteristics, transconductance, output resistance, voltage amplification coefficient, carrier mobility, and switching current ratio, the results show that the device has excellent high-current output. When the gate bias V-GS = 0.2 V, V-DS = 3 V, the drain-source current I-DS = 8.0 x10(-3) A, reaching the milliamp level. The threshold voltage is only about 1.35 V, the switch current ratio of the device is 4.8 x10(4), the ZnO thin film carrier mobility is 0.33 cm(2)V(-1) s(-1), the device has a small output resistance and large voltage amplification. Through the analysis of the output voltage-current characteristics of the device, the operating current of the transistor exhibits a tunneling effect.

Automated summary

A ZnO/Ag double Schottky junction tunnel effect transistor was fabricated using radio frequency magnetron sputtering. ZnO was used as the active layer and the electrical characteristics of the specimen were analyzed. The device showed excellent high-current output, with a drain-source current of 8.0 x10(-3) A and a switch current ratio of 4.8 x10(4) when the gate bias was 0.2 V and the drain-source voltage was 3 V. The device also had a small output resistance and large voltage amplification.