Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 52, Issue 9, Pages 5769-5774Publisher
SPRINGER
DOI: 10.1007/s11664-023-10568-7
Keywords
Electroluminescence; light-emitting diode (LED); electron injection layer; F8BT; semiconductors
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Surface defects significantly affect the performance of LEDs. Surface passivation using ZnO nanoparticles through wet chemical precipitation effectively reduces surface defects. An LED is produced using capped ZnO. The structural components of an ITO/PEDOT:PSS/F8BT/1.ZnO/TPBi/LiF/Al-based LED demonstrate luminescence through the interaction between zinc oxide (1.ZnO) and F8BT at the interface under an electric field. The device exhibits rectifying properties with a threshold voltage of about 5 V and emits green electroluminescence (EL) at a wavelength of approximately 527 nm when forward biased at normal temperature.
Surface defects have a significant impact on the performance of light-emitting diodes (LEDs). To reduce surface defects, surface passivation using zinc oxide (ZnO) nanoparticles utilizing the wet chemical precipitation method is effective. An LED is produced using capped ZnO. The structural components of an ITO/PEDOT:PSS/F8BT/1.ZnO/TPBi/LiF/Al-based LED demonstrates that the interaction of zinc oxide (1.ZnO) and poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) at the interface leads to luminescence under an electric field. The current-voltage curve clearly demonstrates rectifying properties in the device, with a threshold voltage of about 5 V. At normal temperature, the device emits electroluminescence (EL) at a wavelength of roughly 527 nm (green) when forward bias is applied.
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