Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume -, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1007/s11664-023-10677-3
Keywords
Ag nanoparticles; sintering; pressureless bonding; die-attach; power semiconductors
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A specific Ag paste was found to achieve a highly reliable bonding joint, while another set of Ag paste with better sintering performance showed a significant reduction in bonding strength. Characterizations and a proposed bonding formation mechanism were conducted to investigate this anomalous phenomenon, offering valuable theoretical support for the further application of Ag sintering.
Ag sintering technology for die-attach application in power semiconductors has garnered significant attention in recent years due to its excellent high-temperature service reliability. In this study, a highly reliable bonding joint was achieved using a specific Ag paste, resulting in shear strength of 37.63 MPa after pressureless bonding at 250 & DEG;C for 10 min. However, a significant reduction in bonding strength was observed when using another set of Ag paste with better sintering performance. To investigate this anomalous phenomenon, we have performed a series of characterizations and proposed a corresponding bonding formation mechanism. The conclusions and inferences drawn from this study offer valuable theoretical support for the further application of Ag sintering, thereby promoting the advancement of this technology.
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