Analysis of reported substrate-misorientation and growth-temperature dependences of alloy composition in metalorganic vapor-phase epitaxially grown c-plane InGaN

Reported substrate-misorientation and growth-temperature dependences of alloy composition in metalorganic vapor-phase epitaxially grown c-plane InGaN were successfully analyzed by applying least-squares regression to relationships derived in the kink segregation model. The analysis gave a reasonable result that the equilibrium indium content at the kink site decreased with growth temperature T due to increased desorption of indium adatoms. The analysis also revealed that the relaxation time for the indium content at the step-edge site (i.e., the length of time before the indium content at the step-edge site reaches its equilibrium value) was reduced with increasing T (i.e., 34 ms at 780 degrees C and 21 ms at 820 degrees C). The analysis can be improved by more experimental results for various T and contribute to practical predictions of compositional variation in alloy semiconductors.

Automated summary

The reported substrate-misorientation and growth-temperature dependences of alloy composition in metalorganic vapor-phase epitaxially grown c-plane InGaN were analyzed using least-squares regression. The analysis revealed that the equilibrium indium content at the kink site decreased with increasing growth temperature, and the relaxation time for the indium content at the step-edge site was reduced with increasing temperature. This analysis can be improved with more experimental results and contribute to practical predictions of compositional variation in alloy semiconductors.