4.7 Article

Janus Z-scheme heterostructure of ZnIn2S4/MoSe2/In2Se3 for efficient photocatalytic hydrogen evolution

Journal

JOURNAL OF COLLOID AND INTERFACE SCIENCE
Volume 642, Issue -, Pages 669-679

Publisher

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2023.03.199

Keywords

Vs-ZIS /MoSe2 /In2Se3; Janus Z-scheme charge transfer; Heterostructure; H-2 evolution; Photocatalytic mechanism

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Through elaborate designing on the architecture, band alignment, and interface bonding mode, a sulfur vacancy-rich ZnIn2S4-based multivariate heterostructure with specific charge transfer mechanism is constructed, significantly enhancing the photocatalytic activity of hydrogen evolution. Under visible light irradiation, the optimized catalyst exhibits a high hydrogen evolution rate and favorable durability. This work represents an important development in efficient photocatalysts and provides a sound foundation for the design of regulating charge transfer pathways.
Artificial manipulation of charge separation and transfer are central issues dominating hydrogen evolu-tion reaction triggered via photocatalysis. Herein, through elaborate designing on the architecture, band alignment, and interface bonding mode, a sulfur vacancy-rich ZnIn2S4-based (Vs-ZIS) multivariate heterostructure ZnIn2S4/MoSe2/In2Se3 (Vs-ZIS/MoSe2/In2Se3) with specific Janus Z-scheme charge trans-fer mechanism is constructed through a two-step hydrothermal process. Steering by the Janus Z-scheme charge transfer mechanism, photogenerated electrons in the conduction band of MoSe2 transfer syn-chronously to the valence band of Vs-ZIS and In2Se3, resulting in abundant highly-active photogenerated electrons reserved in the conduction band of Vs-ZIS and In2Se3, therefore significantly enhancing the pho-tocatalytic activity of hydrogen evolution. Under visible light irradiation, the optimized Vs-ZIS/MoSe2/ In2Se3 with the mass ratio of MoSe2 and In2Se3 to ZnIn2S4 at 3 % and 30 %, respectively, performs a high hydrogen evolution rate of 124.42 mmol.g (1).h (1), about 43.5-folds of the original ZIS photocatalyst. Besides, an apparent quantum efficiency (AQE) of 22.5 % at 420 nm and favorable durability are also achieved over Vs-ZIS/MoSe2/In2Se3 photocatalyst. This work represents an important development in efficient photocatalysts and donates a sound foundation for the design of regulating charge transfer pathways. (c) 2023 Elsevier Inc. All rights reserved.

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