Journal
JOURNAL OF COLLOID AND INTERFACE SCIENCE
Volume 644, Issue -, Pages 533-545Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2023.03.180
Keywords
BiVO4; Intensity-modulated photocurrent; spectroscopy (IMPS); Metal-organic polymer; Photoelectrochemistry; Rate law
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In this study, a core-shell structure was constructed by overlaying a uniform MOP on the BiVO4 surface, which effectively enhanced the photoelectrochemical water oxidation activity of the photoanode. The MOP overlayer reduced the surface charge recombination rate constant and enhanced the charge transfer rate constant, thereby accelerating water oxidation activity.
Metal-organic polymers (MOPs) can enhance the photoelectrochemical (PEC) water oxidation perfor-mance of BiVO4 photoanodes, but their PEC mechanisms have yet to be comprehended. In this work, we constructed an active and stable composite photoelectrode by overlaying a uniform MOP on the BiVO4 surface using Fe2+ as the metal ions and 2,5-dihydroxyterephthalic acid (DHTA) as ligand. Such modification on the BiVO4 surface yielded a core-shell structure that could effectively enhance the PEC water oxidation activity of the BiVO4 photoanode. Our intensity-modulated photocurrent spectroscopy analysis revealed that the MOP overlayer could concurrently reduce the surface charge recombination rate constant (ksr) and enhance the charge transfer rate constant (ktr), thus accelerating water oxidation activity. These phenomena can be ascribed to the passivation of the surface that inhibits the recombina-tion of the charge carrier and the MOP catalytic layer that improves the hole transfer. Our rate law anal-ysis also demonstrated that the MOP coverage shifted the reaction order of the BiVO4 photoanode from the third-order to the first-order, resulting in a more favorable rate-determining step where only one hole accumulation is required to overcome water oxidation. This work provides new insights into the reaction mechanism of MOP-modified semiconductor photoanodes.& COPY; 2023 Elsevier Inc. All rights reserved.
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