Surface defect compensation of Ga2O3 thin films N-doped by nitrogen plasma for enhanced electrical performance and luminescence effect

Nitrogen (N) doping engineering is considered a promising approach to achieve p-type conductivity of Ga2O3 films. However, the defect self-compensation effect has been a major obstacle in this field. In this work, we propose a straightforward and environmentally friendly strategy to obtain a doped surface on ss-Ga2O3 films via nonthermal N plasma-based treatment. By substituting nitrogen with oxygen, acceptor impurity levels are formed near the valence band, and self-trapped exciton recombination occurs, thereby enhancing the luminescence effect related to acceptor defects. Meanwhile, although achieving stable p-type conduction with N dopant acceptors remains challenging, the surface conductive properties are enhanced by the defect compensation of oxygen vacancy (VO) donor defects. Therefore, detailed investigations into the surface defect compensation of N-doped Ga2O3 thin films are of great research potential for device applications.

Automated summary

A nonthermal N plasma-based treatment is proposed to obtain a doped surface on ss-Ga2O3 films, which enhances the luminescence effect related to acceptor defects. The surface conductive properties are enhanced by the defect compensation of oxygen vacancy (VO) donor defects. Detailed investigations into the surface defect compensation of N-doped Ga2O3 thin films have great research potential for device applications.