Terahertz wave emission with 1.5 μm pump from photoconductive antenna using stacked Er-doped-InAs quantum dot layers with ultrafast carrier relaxation

We fabricated a photoconductive antenna (PCA) with Er-doped InAs quantum dot (QD) layers on a GaAs substrate and demonstrated THz wave generation with 1.5 mu m pump. In terahertz time-domain spectroscopy (THz-TDS), PCAs require high mobility and short lifetimes of photocarriers since the carriers need to respond rapidly to optical pulses for broad THz generation and detection with a high time resolution. In this study, to achieve PCA operation at an optical communication wavelength band of 1.5 mu m, a substrate for a PCA was fabricated using stacked Er-doped-InAs QD layers. Then, photocurrent measurements were performed to observe optical absorption in the 1.5 mu m band. The results indicated the high capability of the PCA for THz wave generation and detection, in fact, which enabled us to generate the THz wave in the 1.5 mu m band optical system.

Automated summary

In this study, a photoconductive antenna (PCA) with Er-doped InAs quantum dot (QD) layers was fabricated and used for THz wave generation with 1.5 μm pump. The results demonstrated the high capability of the PCA for THz wave generation and detection.