Low-temperature electron transport of rutile-type GexSn1-xO2

Rutile-type wide and ultrawide band-gap oxide semiconductors are emerging materials for high-power electronics and deep ultraviolet optoelectronics applications. A rutile-type GeO2-SnO2 alloy (r-GexSn1-xO2) recently found is one of such materials. Herein, we report low-temperature electron transport properties of r-GexSn1-xO2 thin films with x = 0.28 and 0.41. Based on resistivity and magnetoresistance measurements, along with the theory of quantum interference, it is suggested that Efros-Shklovskii variable-range hopping, i.e., hopping over the states within the Coulomb gap, is dominant at lower temperatures (T <= 10 and 15 K) in both r-Ge0.41Sn0.59O2 and r-Ge0.28Sn0.72O2. The negative and positive magnetoresistances observed at low temperatures are attributable to the quantum interference and field-induced spin alignment, respectively. The magnetoresistance measurements at higher temperatures suggest that both Mott variable-range hopping and thermally activated band conduction occur at T < 100 K and that almost pure thermally activated band conduction takes place at T >= 150 K.

Automated summary

This study reports the low-temperature electron transport properties of r-GexSn1-xO2 thin films and finds that Efros-Shklovskii variable-range hopping dominates at lower temperatures, while Mott variable-range hopping and thermally activated band conduction occur at higher temperatures.