High-performance UV-visible photodetectors based on ZnO/ perovskite heterostructures

In recent years, the combination of perovskite with other materials to improve the optoelectronic performance and detection range has received widespread attention. In this paper, ZnO/perovskite heterostructure photodetectors were prepared by sputtering and sol-gel spin-coating method. ZnO/perovskite photodetector exhibits superior photoelectric performance over a wide detection range from UV to visible compared to ZnO and perovskite photodetector. Under 360 nm illumination, the detection performance is higher than ZnO and perovskite photodetector, with responsivity of 2.73 A/W, light-to-dark current ratio of 5.88 x 104, a detectability of 1.09 x 1012 Jones, and an external quantum efficiency of 940.86 %. Meanwhile, perovskite combined with ZnO, the device has higher light-to-dark ratio, responsivity and detectivity than perovskite photodetector in the visible region of 550 and 750 nm. The heterojunction formed by ZnO and perovskite, which has a built-in electric field, thus reducing the dark current, reducing carrier recombination and enhancing the photovoltaic performance. The responsivity of the device slightly decreases after being placed in the atmosphere for 10 days. This study provides a basis for the preparation of heterojunction photodetectors with high optoelectronic performance.

Automated summary

In recent years, there has been widespread attention on combining perovskite with other materials to enhance the optoelectronic performance and detection range. This study prepared ZnO/perovskite heterostructure photodetectors using sputtering and sol-gel spin-coating method. The ZnO/perovskite photodetector exhibited superior photoelectric performance over a wide detection range compared to ZnO and perovskite photodetectors. The heterojunction formed reduced the dark current, carrier recombination, and enhanced the photovoltaic performance.