Local atomic structure of V-doped BiFeO3 thin films measured by X-ray fluorescence holography

Bismuth ferrite (BiFeO3: BFO) is a multiferroic material that exhibits ferroelectricity, antiferromagnetism, and ferroelasticity simultaneously at RT. BFO holds great promise as a ferroelectric semiconductor because of its ability to alter conductivity by reversing its spontaneous polarization. Moreover, BFO thin films doped with transition metals such as Mn or V can modulate their conductivity. Nevertheless, the mechanism of this conductivity change remains unclear because the effects of dopants on the local atomic structure of BFO are not fully understood. In this study, we investigated the local atomic structure around the Fe site in a V-doped BFO thin film by X-ray fluorescence holography. Reconstructed atomic structures from the Fe K & alpha; hologram patterns revealed that the atomic structure stability of the V-doped BFO thin film differs from that of previously reported Mn-doped BFO thin films. The results provide important insights into the mechanism of controlling the conductivity of BFO thin films by dopants.

Automated summary

This study investigates the local atomic structure around the Fe site in a V-doped BFO thin film using X-ray fluorescence holography. The results reveal that the atomic structure stability of the V-doped BFO thin film differs from that of previously reported Mn-doped BFO thin films, providing important insights into the mechanism of controlling the conductivity of BFO thin films by dopants.