The role of indium composition in InxGa1-xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence

In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1-xN/GaN, which are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer. This study signifies the role of prestrained layers on the piezoelectric polarization of LED nanowires, for enhanced luminescence. When compared with the conventional one, the EBL free LED nanowire with prestrained layer shows an enhancement of similar to 2.897% efficiency, which occurs due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer obtains a maximum efficiency of 85.21% along with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for achieving superior optical power across the output spectral range.

Automated summary

In this paper, an electron blocking layer (EBL) free light emitting diode (LED) nanowire with prestrained layers has been proposed. The prestrained layers of InxGa1-xN/GaN are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer to enhance the luminescence of the LED nanowires. The efficiency of the LED nanowire with prestrained layer has been improved by approximately 2.897% compared to the conventional one, due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer achieves a maximum efficiency of 85.21% with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for superior optical power across the output spectral range.