4.7 Article

Mechanisms of tool-workpiece interaction in ultraprecision diamond turning of single-crystal SiC for curved microstructures

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Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ijmachtools.2023.104063

Keywords

Single-crystal silicon carbide; SiC; Diamond turning; Curved microstructured surface; Subsurface damage; Hard and brittle materials

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In this study, the tool-workpiece interaction mechanisms in cutting curved microstructures on 4H-SiC (0001) were explored through ultraprecision diamond turning. It was found that microcracks easily occurred in the feed-in/cut-in area of the micro-dimples due to large friction-induced tensile stress. Dimples located on different cleavage directions exhibited varying tendencies to cause surface cracking and had different subsurface damage characteristics.
Single-crystal silicon carbide (SiC) is one of the most attractive materials for electronics and optics but extremely difficult to cut owing to its hard and brittle properties. While in previous studies, the focus has been placed on machining flat surfaces, in this study, the mechanisms of tool-workpiece interaction in cutting curved microstructures on 4H-SiC (0001) were explored through the ultraprecision diamond turning of micro-dimples. The surface/subsurface of both machined workpieces and used diamond tools were characterized, and the machining characteristics, such as chip formation and cutting forces, were also investigated. It was found that microcracks occurred easily in the feed-in/cut-in area of the dimples, which is caused by a large friction-induced tensile stress due to a large thrust force. The dimples located on the secondary cleavage directions <10-10> (S-dimples) were easy to produce crack-free surfaces, while the dimples located on the primary cleavage directions <-12-10> (P dimples) were very prone to cause cracks on surfaces, even though the chips were formed in a ductile mode. The dimples located on the in-between direction (I-dimples) were moderately prone to surface cracking. It was also found that although the S-dimple has a crack-free surface, it has the thickest subsurface damage (SSD) layer containing a disordered layer, dislocations, and stacking faults; the SSD layer of the P-and I-dimples do not contain stacking faults; and the SSD layer of the I-dimple is the thinnest. Flank wear with nanoscale grooves on the diamond tool was significant without edge chipping and diamond graphitization detected. By optimizing the cutting conditions, a crack-free micro-dimple array was fabricated with nanometric surface roughness. The findings from this study provide guidance for the manufacture of curved SiC parts with high surface integrity, such as molds for replicating microlens arrays and other freeform surfaces on glass.

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