Origin of the channel width dependent field effect mobility of graphene field effect transistors

A model to explain the origin of channel width dependent field effect mobility is proposed. According to our model accounting the effect of non-uniform carrier transport in a graphene channel, the field effect mobility of wide channel graphene FET has been severely underestimated as much as two times, even without accounting the fringing field effect. Based on our model, we propose a more accurate protocol to extract the field effect mobility of graphene FET involving the use of narrow channel width devices. (C) 2016 Published by Elsevier B.V.