Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume -, Issue -, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2023.3311413
Keywords
Detectors array; EUV imaging; extreme ultraviolet (EUV); FinFET technologies
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A 4K detector array for on-wafer extreme ultraviolet (EUV) imaging is demonstrated. It is compatible with FinFET CMOS logic, features a compact 1T pixel and high spatial resolution, and operates without a battery. The stored sensed signal can be accessed through nondestructive wafer-level tests. It provides in-tool monitoring of critical parameters in advanced lithographical systems.
A 4K detector array for on-wafer extreme ultraviolet (EUV) imaging is first-time demonstrated. The proposed detector array features full FinFET CMOS logic compatibility, compact 1T pixel, high spatial resolution, and battery-less sensing. The in situ stored sensed signal can be accessed through offline nondestructive wafer-level tests. EUV images projected on wafers can be truthfully reflected by readout signals, providing in-tool monitoring of critical parameters in advanced lithographical systems for CMOS technologies beyond 5-nm node.
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