Fabrication of the SiC Gate-All-Around JFET

Article Physics, Applied

Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors

Akinori Takeyama et al.

Summary: This study investigated the high dose irradiation effects of gamma-rays on 4H-SiC JFETs. The results showed a shift in the positive threshold voltage and a decrease in transconductance due to the irradiation. In addition, irradiation resulted in threshold voltage instability and hysteresis, indicating the capture and release of carriers.

JOURNAL OF APPLIED PHYSICS (2022)

Add to Collection

Article Engineering, Electrical & Electronic

SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K

M. Kaneko et al.

Summary: In this study, silicon carbide complementary logic gates composed of p- and n-channel JFETs fabricated by ion implantation are shown to operate at high temperature with a low supply voltage. The logic threshold voltage of the complementary JFET inverter has a minimal shift with temperature, and the temperature dependencies of the static and dynamic characteristics can be explained by a simple analytical model of SiC JFETs.

IEEE ELECTRON DEVICE LETTERS (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Venus Calling Silicon Carbide Radio Circuits Can Take The Heat Needed To Phone Home From Our Hellish Sister Planet

Alan Mantooth et al.

Summary: In the summer of 2020, one of the bright spots was the successful flight of U.S. astronauts to the International Space Station and their safe return to Earth aboard a SpaceX commercial spacecraft. This demonstration indicated a potential future where NASA could aim for even farther destinations, such as Venus.

IEEE SPECTRUM (2021)

Add to Collection

Article Engineering, Electrical & Electronic