Journal
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
Volume 33, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TASC.2023.3268547
Keywords
Switches; Junctions; Transmission line measurements; Switching circuits; Josephson junctions; Frequency measurement; Magnetic tunneling; Josephson effect; microwave circuits; niobium; superconducting integrated circuits
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This article reports on the design, fabrication, and measurement of a low-temperature microwave switch architecture that can be fully integrated on chip using single Josephson junctions and superconducting bias lines. A reflective single-pole-single-throw switch is realized by tuning the critical current of a single Josephson junction by way of a local flux bias. The performance of the switches, which require no intrinsic power dissipation, was verified for input powers of -100 to -60 dBm.
We report on the design, fabrication, and measurement of a low-temperature microwave switch architecture that can be fully integrated on chip using single Josephson junctions and superconducting bias lines. The basic switching element used is a reflective single-pole-single-throw switch that is realized by tuning the critical current of a single Josephson junction by way of a local flux bias. A single-pole-single-throw switch is demonstrated at 4.2 K to have an ON/OFF ratio in excess of 20 dB up to 12 GHz. This element is then incorporated into the design of a single-pole-double-throw switch that exhibits an ON/OFF ratio above 20 dB up to 10 GHz. The switches require no intrinsic power dissipation in either state, and their performance was verified for input powers of -100 to -60 dBm. S-parameter simulations using a simple lumped element model are in good agreement with the experimental data, allowing for the design to be extended to larger switch architectures.
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