Journal
MICRO & NANO LETTERS
Volume 11, Issue 7, Pages 351-355Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/mnl.2015.0528
Keywords
nanostructured materials; zinc compounds; II-VI semiconductors; wide band gap semiconductors; semiconductor growth; nanofabrication; electrodeposition; photoelectrochemistry; carrier density; photoconductivity; current density; semiconductor thin films; ultraviolet spectra; visible spectra; nanostructured zinc oxide thin films; optical properties; electrochemical properties; hydrothermal electrochemical deposition technique; fluorine-doped tin oxide coated glass substrate; acidic aqueous zinc acetate solution; n-type behaviour; carrier concentration; steady state photocurrent density; UV irradiation; visible light illumination; zero bias potential; photoelectrochemical properties; HTED technique; temperature 80 degC; ZnO; SnO2:F-SiO2
Funding
- [ESC0103]
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Zinc oxide (ZnO) thin films were grown on fluorine-doped tin oxide coated glass substrate by the hydrothermal electrochemical deposition (HTED) route using slightly acidic aqueous zinc acetate solution at 80 degrees C and were characterised by various techniques. The deposited films showed n-type behaviour with improved carrier concentration. The steady state photocurrent densities were found to be 0.4 mA/cm(2) (under UV irradiation) and 8 mu A/cm(2) (under visible light illumination) at zero bias potential. Significant improvement of optical, electrochemical and photoelectrochemical properties of deposited films could be achieved using HTED technique.
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