CMOS-Compatible Ultraviolet Photodetector Based on p-Nickel-Oxide/ n-Indium-Gallium-Zinc-Oxide Heterojunction Diode

The detection of UVA rays (wavelength of 315-400 nm) is of great interest in technological applications and scientific research. Here, this work demonstrates a complementary metal-oxide-semiconductor (CMOS)-compa-tible UVA photodetector based on p-nickel-oxide/n-indium-gallium-zinc-oxide heterojunction intended for on-chip ultraviolet (UV) detection and imaging. The UVA photo-detector exhibits a dark current density of 0.7 nA/cm(2) at a reversed bias -4 V, a 68% external peak quantum efficiency (EQE) at 340 nm, and a photoresponse time less than 7 ms. The photodetector also exhibits detectivity greater than 1010 Jones and a good linear photoresponsivity. In addition, the photodetector demonstrates an excellent wavelength selectivity and UV/visible rejection ratio of 16.2, making it promising for CMOS-compatible UVA detection and imaging.

Automated summary

This work presents a CMOS-compatible UVA photodetector based on a p-nickel-oxide/n-indium-gallium-zinc-oxide heterojunction for on-chip UV detection and imaging. The photodetector exhibits low dark current density, high peak quantum efficiency, fast photoresponse time, and excellent detectivity and linear photoresponsivity. It also shows great wavelength selectivity and UV/visible rejection ratio, making it promising for CMOS-compatible UVA detection and imaging.