Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 35, Issue 14, Pages 765-768Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2023.3277030
Keywords
Photodetector; PTB7; floating-film transfer method (FTM); heterojunction; Schottky; stamp method; white light detection
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This letter presents the fabrication and characterization of a p-type polymer (PTB7) thin film based vertical structure for white light detection application. The PTB7 thin film was deposited using a low-cost and facile floating-film transfer method. The device exhibited a maximum responsivity of approximately 146.13 mA/W and detectivity of approximately 4.137 x 10(10) Jones under a reverse bias of -2 V and white light intensity of approximately 0.228 mW/cm(2). The rise/fall time of the device was measured as approximately 0.016/0.112 s.
This letter reports a p-type Poly [[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno [3,4-b] thiophenediyl]] (PTB7) thin film based Al/PTB7/Si/Al vertical structure for white light detection application. The thin film of PTB7 polymer was deposited via a low-cost and facile floating-film transfer method (FTM). The morphology of the PTB7 film is analyzed by tapping mode Atomic Force Microscopy (AFM) which gives an average surface roughness as similar to 0.703 nm. The maximum responsivity and detectivity of the fabricated device were obtained as similar to 146.13 mA/W and similar to 4.137 x 10(10) Jones at similar to 0.228 mW/cm(2) white light intensity under a reverse bias of -2 V. The rise/fall time of the fabricated sensing device was measured as similar to 0.016/similar to 0.112 s respectively.
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