Compact Slow-Light Integrated Silicon Electro-Optic Modulators With Low Driving Voltage

In this work, we report two slow-light enhanced silicon optical modulators with electro-optic (EO) phase shifter lengths of 500 mu m and 150 mu m that were fabricated using the AIM Photonics foundry. Tunable power splitters give a threefold increase in the extinction ratio (ER). An eye diagram operating at 10 Gbps was achieved using a very low signal voltage of V-pp = 500mV. The energy per bit is 57.5 fJ/bit and 45 fJ/bit for the 500 mu m and 150 mu m modulators, respectively. The nonlinearity of the devices were measured yielding spur-free dynamic range of 113.2 dB/Hz(2)/(3). The 150 mu m length MZM is among the smallest optical modulators using Bragg gratings for slow light ever reported and results in an estimated modulation efficiency of 0.33 V center dot cm.

Automated summary

This work presents two slow-light enhanced silicon optical modulators with electro-optic phase shifter lengths of 500 μm and 150 μm, fabricated using the AIM Photonics foundry. Tunable power splitters result in a threefold increase in the extinction ratio. Operating at 10 Gbps, an eye diagram was achieved with a very low signal voltage of V-pp = 500mV. The energy per bit is 57.5 fJ/bit and 45 fJ/bit for the 500 μm and 150 μm modulators, respectively. The devices' nonlinearity was measured, yielding a spur-free dynamic range of 113.2 dB/Hz(2)/(3). The 150 μm length MZM is one of the smallest optical modulators using Bragg gratings for slow light ever reported, with an estimated modulation efficiency of 0.33 V·cm.