Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

Article Engineering, Electrical & Electronic

Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs

Seong-In Cho et al.

Summary: This study proposes the use of an interfacial layer (IL) deposited via plasma-enhanced atomic layer deposition to control the hydrogen (H) concentration and improve the electrical properties of oxide TFTs. As the number of IL deposition cycles increases, both the mobility and stability of the TFTs improve. However, TFTs with an IL of 15 cy lose their on/off characteristic. Controlling the H concentration through IL effectively enhances the electrical characteristics of oxide TFTs. The oxide TFT with a 10 cy IL and optimized H incorporation exhibits a high mobility of 50.12 cm(2)/V.s and great stability.

IEEE ELECTRON DEVICE LETTERS (2023)

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Article Chemistry, Multidisciplinary

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Namgyu Woo et al.

Summary: Oxide semiconductors are potential materials for next-generation TFTs. The role of cations should be considered in their design. Ga has been widely used as a carrier suppressor but Al is being researched as a cheaper replacement. PEALD is useful for controlling cation composition. This study deposited an InAlZnO semiconductor using super-cycle PEALD and evaluated different Al doping layers. AZO was selected as the optimal layer and the effects of cations and Al concentration were examined. The high-Al IAZO system showed excellent properties, including high mobility and stability.

ADVANCED MATERIALS INTERFACES (2023)

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Article Chemistry, Physical

Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator

Seong-In Cho et al.

Summary: This study investigated the effect of oxygen plasma time on the properties of top-gate oxide TFTs, revealing its influence on oxygen vacancy, hydrogen incorporation, and positive bias temperature stress stability.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

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Article Engineering, Electrical & Electronic

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

Junsung Kim et al.

Summary: By investigating the channel-shortening effect (CSE) in oxide thin film transistors (TFTs), it was found that utilizing a trench structure can effectively suppress CSE and improve TFT performance, making it particularly suitable for ultra-high-resolution displays.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

The Significance on Structural Modulation of Buffer and Gate Insulator for ALD Based InGaZnO TFT Applications

Wan-Ho Choi et al.

Summary: An ALD sandwich structure was developed for depositing both semiconductor and gate insulator, revealing a hydrogen accumulation effect between Al2O3 and ALD IGZO interface layer leading to deterioration in electrical performance. TFTs with ALD SiO2 buffer and gate insulator demonstrated favorable electric properties, while an optimized structure using both SiO2 and Al2O3 exhibited excellent TFT characteristics with improved stability after hydrogen annealing.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Review Chemistry, Multidisciplinary

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Jueli Shi et al.

Summary: Wide bandgap oxide semiconductors are a unique class of materials with properties of electrical conductivity and optical transparency, widely used in optoelectronics. Recent research focuses on understanding the materials physics and designing new high-performing TFT devices based on oxide semiconductors.

ADVANCED MATERIALS (2021)

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Article Chemistry, Physical