Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV(.)cm(2)/mg

A novel 4H-SiC junction barrier Schottky (JBS) with deep linear graded doping (DLGD) P junction structure is proposed and fabricated to enhance the radiation tolerance of Single-Event Effect (SEE). The radiation-hardened function of the proposed new structure is confirmed via two-dimensional numerical simulation and SEE experiment. The hardened device was tested under heavy ion irradiation with linear energy transfer (LET) up to 83.5 MeV(.)cm(2)/mg. Test results show that the single-event leakage current (SELC) threshold voltage of the hardened device is 400 V, which is the best SEE radiation-hardened performance reported so far for high-voltage 4H-SiC JBS. Compared with the state-of-the-art counterparts, this work is about 2 times improvement in SELC threshold voltage.

Automated summary

A novel 4H-SiC junction barrier Schottky (JBS) with deep linear graded doping (DLGD) P junction structure is proposed and fabricated to enhance the radiation tolerance of Single-Event Effect (SEE). The hardened device was tested under heavy ion irradiation with linear energy transfer (LET) up to 83.5 MeV(.)cm(2)/mg. Test results show that the single-event leakage current (SELC) threshold voltage of the hardened device is 400 V, which is the best SEE radiation-hardened performance reported so far for high-voltage 4H-SiC JBS.