Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures

In this letter, we present a charge-based model to describe the flicker/low-frequency noise behavior in GaN HEMTs. We study flicker noise and introduce the model for frequencies ranging from 10Hz to 10KHz across a wide temperature range (300K to 4.2K). While noise models for GaN HEMTs have been reported previously, including the state-of-the-art ASM HEMT model, an accurate model accounting for the significant gate bias dependence of flicker noise as it approaches the sub-threshold region is still missing. To address this need, we incorporate a separate sub-threshold region noise component. The proposed model effectively captures the flicker noise associated with an AlGaN/GaN HEMT device from sub-threshold to above-threshold, down to cryogenic temperatures, and the same has been validated against experimental data.

Automated summary

In this study, a charge-based model is proposed to describe the flicker/low-frequency noise behavior in GaN HEMTs. The model effectively captures this noise across a wide temperature range, from sub-threshold to above-threshold, including low-temperature conditions, and has been validated against experimental data.