Journal
IEEE ELECTRON DEVICE LETTERS
Volume 44, Issue 9, Pages 1496-1499Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2023.3294551
Keywords
Organic thin-film transistor (OTFT); asymmetric electrode structure; hot-carrier stress (HCS); dual-channel
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This study investigates the electrical mechanisms of the organic thin-film transistor (OTFT) with an asymmetric U-I electrode structure under hot-carrier stress (HCS). The threshold voltage shifts negatively and a dual-channel phenomenon occurs. The degradation behaviors of the linear and saturated I-D-V-G transfer curves are different. These are attributed to the non-uniform electric-field and heat distribution, which results in the non-uniform trapped holes in the organic-gate insulator-1 by charge trapping model during HCS. Finally, physical mechanisms based on COMSOL simulations and energy bands are proposed to clarify the degradation phenomena.
This study investigates the electrical mechanisms of the organic thin-film transistor (OTFT) with an asymmetric U-I electrode structure under hot-carrier stress (HCS). The threshold voltage shifts negatively and a dual-channel phenomenon occurs. In addition, the degradation behaviors of the linear and saturated I-D-V-G transfer curves are different. These are attributed to the non-uniform electric-field and heat distribution, which results in the non-uniform trapped holes in the organic-gate insulator-1 by charge trapping model during HCS. Finally, physical mechanisms based on COMSOL simulations and energy bands are proposed to clarify the degradation phenomena.
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