Periodic Inverted Micropyramid-Si/Graphene Self-Powered Photodiode With Excellent Current Stability for Fourier Single-Pixel Imaging

In this letter, we reported a self-powered periodic inverse micropyramid (PIMP)-Si/graphene photo-diode with high responsivity, specific detectivity and fast response speed of 0.78 A W-1, 3.83 x 10(14)Jones and 226/364 mu s for rise/fall time at zero bias upon 880 nm illumination, respectively. It was found that the introduction of ultrathin interfacial oxide layer can passivate surface states and thereby lead to an excellent current stability, which enables high-quality Fourier single-pixel imaging (FSI). A 256 x 256-pixel image achieved at 7.79% sampling rate showed the peak-signal-to-noise ratio (PSNR) of28.3 dB and structural similarity index measure (SSIM) of0.50, revealing the high-quality single-pixel imaging (SPI).

Automated summary

In this study, a self-powered periodic inverse micropyramid (PIMP)-Si/graphene photodiode with high responsivity, specific detectivity, and fast response speed was reported. The rise/fall time at zero bias upon 880 nm illumination were found to be 226/364 μs, respectively. The introduction of an ultrathin interfacial oxide layer was shown to passivate surface states and improve current stability, enabling high-quality Fourier single-pixel imaging.