Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 degrees C, similar to 92 atm., containing CO2/N-2/SO2 etc.) for 10 days. The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) was evaluated by two complementary approaches, (1) in-situ electrical characterization, which revealed proper transistor operation (including E-mode VTH with <0.09 V variation) in extreme environments; and (2) advanced microscopy investigation of the device after test, which highlighted the effect of the stress conditions on the epitaxial and device structures. To the best of the authors' knowledge, this is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, therefore establishing the proposed GaN technology as a strong contender for harsh environment mixed-signal electronics.

Automated summary

This letter presents an enhancement-mode GaN transistor technology that can operate in a simulated Venus environment for 10 days. The robustness of the transistor was evaluated through in-situ electrical characterization and advanced microscopy investigation. This is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, establishing it as a strong contender for harsh environment mixed-signal electronics.