Related references
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Article
Engineering, Electrical & Electronic
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IEEE ELECTRON DEVICE LETTERS
(2023)
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Summary: The authors demonstrated the enhanced light output of 275-nm AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) structures by employing shallow photonic crystal (PC) patterns on the p-AlGaN contact layer surface. The intensity of the emission from the top or bottom can be enhanced by up to 331% or 246%, respectively, compared to the unpatterned sample due to high-order coherent diffraction and Purcell enhancement of spontaneous emission. This study suggests a simpler way for achieving more energy-efficient DUV LEDs with high emission for various applications in disinfection and sterilization.
Article
Engineering, Electrical & Electronic
Liang Guo et al.
Summary: In this work, we fabricated and characterized 4 x 4 parallel flip-chip AlGaN-based micro-LED arrays with varied mesa diameters. The electrical and optical characteristics of the micro-LED arrays show strong size dependence for ultraviolet communication (UVC). Our research proves that tailoring the mesa size of parallel flip-chip AlGaN-based micro-LED arrays can further enhance its performance in UVC.
IEEE PHOTONICS JOURNAL
(2022)
Article
Chemistry, Multidisciplinary
Duo Li et al.
Summary: This study proposes a parallel-arrayed planar approach to design micro deep-ultraviolet light-emitting diodes (mu-LEDs) with ultrahigh power density. These devices exhibit high output power, efficiency, and modulation bandwidth, making them suitable for developing high-modulation-bandwidth wireless communication and meeting the requirements for bio-elimination.
ADVANCED MATERIALS
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Article
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Huabin Yu et al.
Summary: This study designed and fabricated a deep ultraviolet light-emitting array consisting of 100 micro-LEDs, which showed a significant enhancement in total light output power by nearly 52% at an injection current of 100 mA compared to a traditional large LED chip. The array also achieved a higher peak external quantum efficiency and better forward directionality of emission.
JOURNAL OF SEMICONDUCTORS
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Optics
Sheng Hang et al.
Summary: This report systematically investigates the impact of different mesa designs on the optical and electrical characteristics of GaN-based micro-LEDs. The results show that using beveled mesas can enhance light extraction efficiency, but it also increases charge-coupling effect and nonradiative recombination.
Article
Materials Science, Multidisciplinary
Huabin Yu et al.
Summary: This work reports a feasible approach to increase the light output power and bandwidth of a deep-ultraviolet LED for optical wireless communication. By embedding a SiO2-based microcavity with an aluminum reflector, photon escape from the LED is facilitated to enhance the light extraction efficiency, while the microcavity structure reduces the resistance-capacitance time constant and increases the modulation bandwidth. Experimental results demonstrate a significant enhancement in light output power and modulation bandwidth for the deep-ultraviolet LED with microcavities.
ADVANCED OPTICAL MATERIALS
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Summary: Augmented reality is a next-generation interactive display that enhances user interaction with digital content and the real world. The use of micro-LEDs in AR has some limitations, but this study successfully incorporates distributed Bragg reflectors into micro-LEDs to improve their optical characteristics, making them suitable for various AR applications.
APPLIED PHYSICS LETTERS
(2022)
Review
Physics, Multidisciplinary
Haochen Zhang et al.
Summary: Graded AlGaN alloys, by controlling the variation of aluminum composition, play a crucial role in UV light emitters and power electronic devices, enabling high-density carrier generation through polarization-induced doping, as well as manipulating carrier transport behavior through band engineering.
REPORTS ON PROGRESS IN PHYSICS
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Article
Optics
Huabin Yu et al.
Summary: The study successfully achieved high-quality Al(Ga)N epilayers by using a hybrid patterned sapphire substrate (HPSS), which can potentially lead to the development of high-efficiency and high-power UV LEDs in the future.
Article
Physics, Applied
Richard Floyd et al.
Summary: The study showed that reducing the pixel size of the truncated cone AlGaN DUV micropixel LEDs from 90 to 5 mu m can significantly improve light extraction efficiency by reducing the re-absorption of sideways-travelling photons. In addition, the performance of the device can be further enhanced by coating the sidewall with Al2O3/Al, resulting in a pulsed-mode brightness of 10.3 kW cm(-2) from a single 5 mu m truncated cone micropixel on-wafer.
APPLIED PHYSICS EXPRESS
(2021)
Article
Optics
Meng Tian et al.
Summary: Micro-LEDs with smaller inclined chip sidewall angles exhibit improved external quantum efficiency due to stronger reflection of the inclined sidewall, leading to enhanced light extraction efficiency. The EQE improvement by adopting an inclined sidewall is more significant as the diameter of the LED chip reduces. Numerical optical modeling further verifies the impact of sidewall angles on the light extraction efficiency of micro-LEDs.
Review
Optics
Jinchai Li et al.
Summary: This paper reviews recent advances in ultraviolet LEDs and summarizes that multiple physical fields could build a toolkit for effectively controlling and tailoring crucial properties of nitride quantum structures.
LIGHT-SCIENCE & APPLICATIONS
(2021)
Review
Materials Science, Multidisciplinary
Rongqiao Wan et al.
Summary: This review summarizes the progress of modulation bandwidth improvement schemes for GaN LED transmitters, covering various aspects from epitaxial to device levels. It not only presents multiple epitaxial methods, but also introduces solutions for addressing slow Stokes transfer and long carrier life in white LEDs.
ADVANCED PHOTONICS RESEARCH
(2021)
Article
Chemistry, Multidisciplinary
Yuanhao Sun et al.
Summary: By adopting a critical-temperature approach and optimizing growth conditions, AlGaN-based MQWs with an internal quantum efficiency greater than 80% and emission wavelength shorter than 280 nm were successfully grown on nano-patterned sapphire substrates. A deep-ultraviolet light-emitting-diode (DUV-LED) device was fabricated using these high IQE MQWs, achieving a light output power of 17.3 mW at an injection current of 100 mA, demonstrating excellent device performance.
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Michael Kneissl et al.
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IEEE TRANSACTIONS ON ELECTRON DEVICES
(2013)
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APPLIED PHYSICS LETTERS
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