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Optimized recess etching criteria for T-gate fabrication achieving ft=290 GHz at Lg=124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel

ELECTRONICS LETTERS (2023)

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Optimized recess etching criteria for T-gate fabrication achieving ft=290 GHz at Lg=124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel

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