A dual P-layer 4H-SiC p-i-n photodetector for the detection from extreme ultraviolet to ultraviolet-A

A dual P-layer 4H-SiC p-i-n ultraviolet photodetector is proposed and studied. The modeling results of the photoelectric characteristics demonstrate the dual P-layer structure could effectively reduce the recombination of the photogenerated carriers and separate more electron-hole pairs near the surface of the device. And, the photodetector exhibits a significantly high response and detectivity, especially in the wavelength range of extreme ultraviolet to ultraviolet-C. A high spectral response peak of 0.2 A/W corresponding to a quantum efficiency of 95.3% is achieved. Furthermore, an avalanche breakdown voltage as low as 182 V is observed. The dual P-layer structure significantly presents an innovative approach for the advancement of future ultraviolet photodetectors applied in the detection at illumination wavelengths ranging from extreme ultraviolet to ultraviolet-A. A novel dual P-layer p-i-n UV photodetector is presented, exhibiting high responsiveness, a high detection rate, and a low avalanche breakdown voltage. The dual P-layer structure offers a highly innovative approach to advance future ultraviolet photodetectors for detection across illumination wavelengths ranging from extreme ultraviolet to ultraviolet-C.image

Automated summary

A novel dual P-layer 4H-SiC p-i-n ultraviolet photodetector is proposed and investigated, showing effective reduction of carrier recombination and enhanced separation of electron-hole pairs near the device surface. The photodetector exhibits high response and detectivity, particularly in the extreme ultraviolet to ultraviolet-C wavelength range. It achieves a peak spectral response of 0.2 A/W with a quantum efficiency of 95.3% and a low avalanche breakdown voltage of 182 V. The dual P-layer structure offers an innovative approach for the advancement of future ultraviolet photodetectors across different illumination wavelengths.