Epitaxial Growth of (-201) β-Ga2O3 on (001) Diamond Substrates

Heteroepitaxial growth of beta-Ga2O3 on (001) diamond by metal-organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (-201) beta-Ga2O3 parallel to(001) diamond and [010]/[-13-2] beta-Ga2O3 parallel to|[110]/[1-10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along < 110 > diamond is demonstrated with a lattice mismatch of 1.03-3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.

Automated summary

Heteroepitaxial growth of beta-Ga2O3 on (001) diamond by MOCVD was achieved, and the epitaxial relationship and crystal structure were studied using TEM.