Electrical Conductivity Improvement of Point Defects in 4H-SiC

This researchexplores the promising qualities of 4H-SiCas a material for next-generation semiconductor devices, mainly focusingon overcoming current fabrication challenges by studying point defects.The research suggests that defect-selective technology might providea novel approach for developing large-scale 4H-SiC substrates withimproved electrical conductivity, contributing to a reliable fabricationprocess for future semiconductor applications. Owing to its high melting temperature, the 4H-SiC substrateexhibitsnumerous defects that are difficult to remove, hindering the developmentof large-scale, high electrical conductivity 4H-SiC substrates. Thisstudy constructs and analyzes atomic models of point defects in 4H-SiC,focusing mainly on Si and C atom vacancies and interstitial defects.Point defects in 4H-SiC can increase the electrical conductivity.For example, the Si-0 vacancy has been found to enhancethe electrical conductivity of a 4H-SiC unit cell by more than 220times, converting its wide bandgap property to metallic. The researchdemonstrates that defects can improve 4H-SiC properties, paving theway for defect-selective technology to develop large-scale, high electricalconductivity 4H-SiC substrates.

Automated summary

This research investigates the potential advantages of 4H-SiC as a material for next-generation semiconductor devices and proposes that defect-selective technology could be used to develop large-scale 4H-SiC substrates with improved electrical conductivity, thereby contributing to a reliable fabrication process for future semiconductor applications.