4.7 Article

Three-Dimensional Cross-Linked Arrays of Comb-Like ZnO: Epitaxial Growth and Modulation

Journal

CRYSTAL GROWTH & DESIGN
Volume 23, Issue 10, Pages 7276-7284

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.3c00665

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This study demonstrates a straightforward chemical vapor deposition technique for the growth of three-dimensional cross-linked comb-like ZnO arrays. The researchers propose a cooperative growth mechanism to construct this unique structure. The development of such a 3D cross-linked array is of great significance for gas-sensitive devices, optoelectronics, and quantum electrical information applications.
The method to construct the three-dimensional (3D) ordered nanostructure of ZnO for improving its performance has attracted considerable attention and remains a challenging issue, which has theoretical and practical implications for nanoscale applications such as optoelectronics and gas sensors. Herein, we demonstrate a straightforward chemical vapor deposition (CVD) technique for the epitaxial growth of 3D cross-linked comb-like ZnO arrays on r-plane sapphire substrates. The morphological, structural, and optical properties of the as-synthesized samples were examined using X-ray diffraction, field emission scanning electron microscopy, field emission transmission electron microscopy, Raman spectroscopy, UV-vis spectroscopy, and photoluminescence spectroscopy. A cooperative growth mechanism is suggested to construct 3D cross-linked comb-like ZnO arrays: The supersaturated alloy forms a backbone of oblique nanosails along [1010] by the Au-assisted catalytic vapor-liquid-solid (VLS) growth mechanism and the inevitable vapor-solid (VS) lateral extension growth process; simultaneously discrete nanoteeth are grown along the unilateral c-direction [0001] by the Zn self-catalytic VLS mechanism, culminating in a 3D cross-linked array of comb-like ZnO. The development of such a unique 3D cross-linked array allows the exploration of performance in gas-sensitive devices, optoelectronics, and quantum electrical information applications.

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