Photoelectronic properties of antimony selenide nanowire synthesized by hydrothermal method

With the advantages of stable structure, large optical absorption coefficient, optimal bandgap, and high See-Beck coefficient, antimony selenide (Sb2Se3) has good prospects for applications in solar cells, photodetectors, ther-moelectric devices, etc. In this work, high quality Sb2Se3 nanowires were fabricated by a hydrothermal method and the fabrication of a single nanowire photodetector was reported. From the experimental data, a band gap of Sb2Se3 nanowires was calculated to be 1.04 eV. The Sb2Se3 single nanowire detector has a dark current of 230 pA, a photocurrent of 45 nA, and a photoresponsivity of 196 mA/W under the light irradiation intensity of 14.4 mW/cm2 @ 532 nm. The photoresponse time of PDs is observed to be 90 ms and 100 ms. The results could enable the large-scale synthesis of high-purity Sb2Se3 nanowires with excellent optical properties and their application in functional optoelectronic devices.

Automated summary

With its stable structure, large optical absorption coefficient, optimal bandgap, and high See-Beck coefficient, antimony selenide (Sb2Se3) shows promising applications in solar cells, photodetectors, and thermoelectric devices. This study successfully fabricated high-quality Sb2Se3 nanowires through a hydrothermal method and demonstrated the fabrication of a single nanowire photodetector. The Sb2Se3 nanowires were found to have a bandgap of 1.04 eV, and the single nanowire photodetector exhibited excellent performance with a dark current of 230 pA, a photocurrent of 45 nA, and a photoresponsivity of 196 mA/W under specific light irradiation. The results provide a foundation for the large-scale synthesis of high-purity Sb2Se3 nanowires and their application in optoelectronic devices.