Low-damage photolithography for magnetically doped (Bi,Sb)2Te3 quantum anomalous Hall thin films

We have developed a low-damage photolithography method for magnetically doped (Bi,Sb)(2)Te-3 quantum anomalous Hall (QAH) thin films incorporating an additional resist layer of poly(methyl methacrylate) (PMMA). By performing control experiments on the transport properties of five devices at varied gate voltages (V (g)s), we revealed that the modified photolithography method enables fabricating QAH devices with the transport and magnetic properties unaffected by fabrication process. Our experiment represents a step towards the production of novel micro-structured electronic devices based on the dissipationless QAH chiral edge states.

Automated summary

We have developed a low-damage photolithography method for fabricating magnetically doped (Bi,Sb)(2)Te-3 quantum anomalous Hall (QAH) thin film devices. Through experiments, we demonstrated that this modified method enables the production of devices with unaffected transport and magnetic properties.