Polymorphism and Ferroelectricity in Indium(III) Selenide

Two-dimensionalindium(III) selenide (In2Se3) is characterizedby rich polymorphism and offers the prospect ofovercoming thickness-related depolarization effects in conventionalferroelectrics. & alpha;-In2Se3 has attractedattention as a ferroelectric semiconductor that can retain ferroelectricityat the monolayer level; thus, it can be potentially deployed in highdensity memory switching modes that bypasses the traditional von Neumannarchitecture in device design. However, studies involving & alpha;-In2Se3 are often hindered by difficulties in phaseidentification owing to mixing with & beta;-In2Se3. & beta;-In2Se3 has several polymorphs, amongwhich include the antiferroelectric and ferroelastic & beta;& PRIME;-In2Se3. It is important to understand polymorph transitionsand crystal-amorphous phase transitions in & beta;-In2Se3 to tap into the potential of this material for resistivememory storage. In this review, we discuss how the various polymorphsand polytypes of In2Se3 can be rigorously differentiatedand further highlight recent applications of these phases in ferroelectricsand memory devices.

Automated summary

Two-dimensional indium(III) selenide (In2Se3) with rich polymorphism shows potential in overcoming depolarization effects in traditional ferroelectrics. α-In2Se3 has attracted attention as a ferroelectric semiconductor at the monolayer level, making it suitable for high-density memory switching modes. However, difficulties in phase identification due to mixing with β-In2Se3 hinder α-In2Se3 studies. Understanding polymorph transitions and crystal-amorphous phase transitions in β-In2Se3 is important for its application in resistive memory storage. This review discusses the differentiation of In2Se3 polymorphs and polytypes and highlights recent applications in ferroelectrics and memory devices.