Journal
CHEMICAL ENGINEERING JOURNAL
Volume 469, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2023.143790
Keywords
Flexible perovskite solar cells; Tin dioxide; Silane coupling agents; Dual-interface passivation
Categories
Ask authors/readers for more resources
Defect-induced charge non-radiative recombination loss at perovskite/charge transport layers interfaces is a major issue for the efficiency and stability of flexible perovskite solar cells. This study proposes a comprehensive strategy to reduce the defect density at these interfaces, using TMPU material to improve conductivity of SnO2 and passivate the SnO2/perovskite interface defects, and TMFS layer to suppress perovskite surface defects and improve environmental stability. With this dual-interface engineering strategy, the optimized flexible and rigid PSCs achieve higher photoelectric conversion efficiency compared to the pristine devices, and the flexible device also demonstrates excellent mechanical durability.
Defect-induced charge non-radiative recombination loss at perovskite/charge transport layers (CTLs) interfaces greatly deteriorates the efficiency and stability of flexible perovskite solar cells (PSCs). Therefore, a comprehensive strategy for reducing the defect density both at perovskite/CTLs interfaces is urgently required. Herein, the 1-[3-(Trimethoxysilyl)propyl]urea (TMPU) material is adopted to improve the conductivity of SnO2 and passivate the unfavorable SnO2/perovskite interface defects. Meanwhile, the trimethoxy(3,3,3-trifluoropropyl) silane (TMFS) layer is employed at perovskite/spiro-OMeTAD interface for the sake of suppressing the surface defects of perovskite and ameliorating environmental stability of the perovskite. Such a dual-interface engineering strategy is beneficial to significantly reduce interface defect density and unfavorable non-radiative recombination loss, thus achieving faster transport and effective collection of carriers. Consequently, the optimized flexible and rigid PSCs yield outstanding photoelectric conversion efficiency (PCE) of 20.06% and 23.11%, respectively, which are both significantly higher than the pristine devices. Notably, the target flexible device presents excellent mechanical durability and retains 91.3% of the initial PCE after 5000 bending cycles with bending radius of 10 mm.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available