High-& kappa; Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose

Article Nanoscience & Nanotechnology

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

H. Alex Hsain et al.

Summary: By inserting a 1 nm Al2O3 layer at the HZO/TiN interface, a protective passivating layer is introduced, resulting in improved remanent polarization and endurance of TiN/HZO/TiN capacitors.

NANOTECHNOLOGY (2023)

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Article Chemistry, Physical

A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity

Xiang Zhou et al.

Journal of Materiomics (2023)

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Article Engineering, Electrical & Electronic

Sub 5 Å-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process

Dipjyoti Das et al.

Summary: By utilizing high-pressure annealing (HPA) and rapid cooling (RC) processes, CMOS-compatible ferroelectric (FE) zirconium-rich hafnium zirconium oxide (HZO) films with morphotropic phase boundary (MPB) were successfully achieved for next-generation DRAM device applications. The combination of HPA and RC processes resulted in a significant reduction in leakage current and the lowest equivalent oxide thickness (EOT) among all reported values for CMOS-compatible HZO films.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Nanoscience & Nanotechnology

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

Venkateswarlu Gaddam et al.

Summary: We have successfully achieved an equivalent oxide thickness (EOT) of 4.1 angstrom with a dielectric constant (kappa) of 56 in metal-ferroelectric-metal (MFM) capacitors compatible with complementary metal-oxide semiconductor (CMOS) using a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack heterostructure films and high-pressure annealing (HPA) technique. This achievement is attributed to the interfacial coupling between the FE and AFE films and the high-quality crystalline structure formed by HPA. The low EOT and high kappa values, together with stable leakage current density, make this technology highly promising for future dynamic random access memory (DRAM).

ACS APPLIED MATERIALS & INTERFACES (2022)

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Proceedings Paper Engineering, Multidisciplinary

Transistor Reliability Characterization for Advanced DRAM with HK plus MG & EUV process technology

N-H Lee et al.

Summary: With the growth of high performance computing in various industrial sectors, the need for advanced semiconductor products has increased. This paper reviews the reliability of various devices used in 15nm DRAM memory and proposes a degradation modeling method for capacitors.

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)

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Article Materials Science, Multidisciplinary

Defect Engineering to Achieve Wake-up Free HfO2-Based Ferroelectrics

Alireza Kashir et al.

Summary: Increasing ozone dosage can reduce carbon contamination and oxygen defects, improving the stability of the thin films and decreasing the wake-up effect. Insufficient ozone dosage leads to an increase in oxygen vacancies and carbon concentration, affecting the film performance.

ADVANCED ENGINEERING MATERIALS (2021)

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Review Nanoscience & Nanotechnology

Wake-Up Effect in HfO2-Based Ferroelectric Films

Pengfei Jiang et al.

Summary: This paper presents the recent developments in the wake-up effect of doped HfO2-based films, discussing the influence of different dopants and deposition processes on the wake-up effect. It highlights the significant impact of the interface properties between the electrode and ferroelectric layer on the characteristics of the wake-up effect, and proposes methods to optimize and control this effect.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Engineering, Electrical & Electronic

Method to Achieve the Morphotropic Phase Boundary in HfxZr1-xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications

Seongho Kim et al.

Summary: A novel method using electric field cycling is proposed to induce a phase transition in HfxZr1-xO2 to reach the morphotropic phase boundary without high temperature annealing and increasing leakage current. This two-step process involves low temperature annealing to form the tetragonal phase followed by electric field cycling to achieve the morphotropic phase boundary of tetragonal and orthorhombic phase in HfxZr1-xO2 film. This approach enables achieving low voltage with high dielectric k value and low leakage current, meeting the requirements for next-generation DRAM cell capacitor dielectric materials.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Chemistry, Multidisciplinary

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights

Jinchen Wei et al.

Summary: It is believed that promoting the formation of the ferroelectric orthorhombic phase in HfO2 and (Hf,Zr)O-2 thin films through O-poor growth conditions can increase polarization. However, the easy formation of point defects can limit growth and decrease polarization, emphasizing the importance of controlling defects.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (∼68)

Jiuren Zhou et al.

Summary: Through Al incorporation and careful temperature engineering, a HfO2-based dielectric film with ultra-high permittivity has been achieved, offering ultra-low leakage current density and extremely small equivalent oxide thickness.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

The Smallest Engine Transforming Humanity: The Past, Present, and Future

Kinam Kim

Summary: Semiconductors, a crucial innovation of the 20th century, have been instrumental in shaping our modern, digital society. The COVID-19 pandemic has accelerated the shift towards a digital economy, offering new opportunities for the semiconductor industry. While concerns about sustainability exist, it is important for the community to unite and take coordinated action to overcome challenges and progress for future generations.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Article Engineering, Electrical & Electronic

Hf1-xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric

Alireza Kashir et al.

Summary: Engineering of HfO2-ZrO2 ferroelectric thin films can substantially increase their dielectric constant. By adjusting the composition of HZO(x) layers, the coexistence of FE and AFE orderings can be controlled, leading to a significant enhancement of the dielectric constant in nanolaminate films.

ACS APPLIED ELECTRONIC MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Towards an ideal high-κ HfO2-ZrO2-based dielectric

Alireza Kashir et al.

Summary: The study investigates the impact of MPB density on the film structure and dielectric properties of HfO2-ZrO2 solid solution thin films. By preparing nanolaminates with different layer thicknesses, the density of the MPB is increased and subsequently the dielectric properties are enhanced. The new design shows the highest epsilon(r) observed in HfO2-ZrO2 thin films, providing a promising approach for achieving an ideal high-kappa CMOS-compatible device in the current electronic industry.

NANOSCALE (2021)

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Review Chemistry, Inorganic & Nuclear

Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics

Monica Materano et al.

Summary: Oxygen-related defects play a significant role in the ferroelectric properties of HfO2, impacting phase formation and device performance. Research surveys literature, assessing extensive studies on phase stabilization, and discusses device reliability involving oxygen vacancies across various applications.

INORGANIC CHEMISTRY FRONTIERS (2021)

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Article Engineering, Electrical & Electronic

Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering

Alireza Kashir et al.

Summary: By tuning the ozone pulse duration, annealing process, and metal/insulator interface, a wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization value was achieved. The use of a tungsten capping electrode and insertion of a Pt layer between the interfaces helped reduce leakage current while maintaining the 2Pr value constant.

ACS APPLIED ELECTRONIC MATERIALS (2021)

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Article Engineering, Electrical & Electronic

Hf1-xZrxO2/ZrO2 Nanolaminate Thin Films as a High-kappa Dielectric

Alireza Kashir et al.

Summary: The coexistence of FE and AFE orderings can be controlled by adjusting the composition of HZO(x) layers in the HZO(x)/ZrO2 nanolaminate films, resulting in a high dielectric constant of around 60. Structural investigations confirm a coexistence of polar orthorhombic and nonpolar tetragonal structures, consistent with the observed polarization hysteresis loops. The strain generated in the nanolaminate structure significantly facilitates a field-induced transition from the AFE to the FE phase, without considerably affecting the leakage current, making this system highly promising for complementary metal oxide semiconductor-compatible capacitors.

ACS APPLIED ELECTRONIC MATERIALS (2021)

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Article Engineering, Electrical & Electronic