4.7 Article

Thermal atomic layer etching of CoO using acetylacetone and ozone: Evidence for changes in oxidation state and crystal structure during sequential exposures

Journal

APPLIED SURFACE SCIENCE
Volume 638, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2023.157923

Keywords

Atomic layer etching; Cobalt oxide; Surface reactions; Oxidation state; Crystal structure; Acetylacetone

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Thermal atomic layer etching (ALE) of CoO was demonstrated using sequential exposures of acetylacetone (Hacac) and ozone (O3). The surface reactions involved the removal of CoO by Hacac and the elimination of carbon residue by ozone. In situ spectroscopic ellipsometry showed a linear decrease in CoO film thickness with etch rate of 0.43 & ANGS;/cycle at 250 degrees C. The CoO film underwent changes in oxidation state and crystal structure during each reactant exposure. Ex situ grazing incidence X-ray diffraction (GIXRD) and X-ray photoelectron spectroscopy (XPS) confirmed the oxidation state of different cobalt oxides. Quadrupole mass spectrometry and atomic force microscopy measurements also provided insights into the etching process and surface roughness reduction during CoO ALE.
Thermal atomic layer etching (ALE) of CoO was demonstrated using sequential exposures of acetylacetone (Hacac) and ozone (O3). During the surface reactions, Hacac can remove CoO according to: CoO + 2Hacac & RARR; Co(acac)2 + H2O. Ozone was employed to eliminate carbon residue resulting from Hacac adsorption. In situ spectroscopic ellipsometry observed a linear decrease in CoO film thickness versus Hacac and O3 exposures with an etch rate of 0.43 & ANGS;/cycle at 250 degrees C. The surface of the CoO film was also observed to undergo changes in oxidation state and crystal structure with each reactant exposure. Ex situ grazing incidence X-ray diffraction (GIXRD) studies revealed that the initial h-CoO thin films were oxidized to c-Co3O4 by O3. Subsequently, the GIXRD analysis showed that the c-Co3O4 thin films were reduced to c-CoO by Hacac. X-ray photoelectron spectroscopy investigations confirmed the oxidation state of the various cobalt oxides. Quadrupole mass spectrometry measurements observed Co(acac)2 etch products during Hacac exposures on Co3O4 and CoO powder. Atomic force microscopy measurements also monitored a reduction in surface roughness during CoO ALE. These studies reveal that alternating changes in oxidation state and crystal structure occur during the sequential Hacac and O3 exposures that define CoO thermal ALE.

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